MORTET Vincent Institute of Physics AS CR, v.v.i.

(100) Substrate Processing Optimization for Fabrication of Smooth Boron Doped Epitaxial Diamond Layer by PE CVD

Co-authors FEKETE Ladislav, ASHCHEULOV Petr, TAYLOR Andrew, HUBÍK Pavel, TREMOUILLE David, BEDEL-PEREIRA Elena

Boron doped diamond layers have been grown in an SEKI AX5010 microwave plasma enhanced chemical vapour deposition system. Effect of surface preparation, i.e. polishing and O2/H2 plasma etching on epitaxial growth on type Ib (100) HPHT synthetic diamonds were investigated. Using optimized substrate preparation, smooth (Rrms = 1 nm) boron doped diamond layers with metallic conduction and free of none epitaxial crystallites have been grown with a relatively high growth rate of 3.7 μm/h. Diamond were characterized by optical microscopy, optical profilometry, atomic force microscopy and Hall effect.

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