HULICIUS Eduard Institute of Physics ASCR, v.v.i.

Nanostructure based on the AlSb/InAs(1-x)Sbx/AlSb Deep Quantum Wells used for the Two-Band Superlinear Luminescence

Co-authors MIKHAILOVA M. P., IVANOV E. V., DANILOV L. V., PETUKHOV A. A., KALININA K. V., SLOBOZHANYUK S. I., ZEGRYA G. G., STOYANOV N. D., YAKOVLEV Yu. P., HOSPODKOVÁ A., PANGRÁC J., OSWALD J., ZÍKOVÁ M.
Collaboration: Ioffe Physical Technical Institute RAS, St.Petersburg, Russian Federation

The superlinear electroluminescence (SLEL) of the MOVPE structures based on AlSb/InAs(1-x)Sbx/AlSb deep quantum wells (QWs) will be presented. Two samples differing in the InAsSb active layer composition were prepared. Dependence of the electroluminescence spectra and optical power on the drive current in nano-heterostructures with a deep AlSb/InAs(1-x)Sbx/AlSb QW in 77–300 K temperature range was measured. Intensive two-band SLEL in the 0.5-0.8 eV photon energy range and optical power enhancement with the drive current at RT caused by the contribution of the additional electron-hole pairs, generated at AlSb/InAsSb interface, due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electron level Ee1 in the InAsSb QW, were found. This work is a continuation of our recent paper1 devoted to the SLEL properties of the similar QWs, but the structure was grown with different type of interfaces between AlSb barrier and InAsSb QW. In our previous work the interfaces were grown as AlAs-like, while results presented here are measured on samples with InSb-like interfaces between barriers and QW. We have observed an intensive two-band SLEL and have we described the temperature dependence in the range 77-300 K. ACKNOWLEDGEMENTS: This work was supported by: CSF Project 13-15286S, Infrastructural project MŠMT LM 2011 026 “Laboratory of nanostructures and nanomaterials” and RBRF#12-02-00597. LITERATURE: 1 M. P. Mikhailova et al., J. Appl. Phys. 112 (2012) 230108

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