|MORTET Vincent||Institute of Physics AS CR, v.v.i.|
|Spoluautoři FEKETE Ladislav, ASHCHEULOV Petr, TAYLOR Andrew, HUBÍK Pavel, TREMOUILLE David, BEDEL-PEREIRA Elena|
Boron doped diamond layers have been grown in an SEKI AX5010 microwave plasma enhanced chemical vapour deposition system. Effect of surface preparation, i.e. polishing and O2/H2 plasma etching on epitaxial growth on type Ib (100) HPHT synthetic diamonds were investigated. Using optimized substrate preparation, smooth (Rrms = 1 nm) boron doped diamond layers with metallic conduction and free of none epitaxial crystallites have been grown with a relatively high growth rate of 3.7 μm/h. Diamond were characterized by optical microscopy, optical profilometry, atomic force microscopy and Hall effect.