MAJID Abdul Majmaah University

Spoluautoři LAN Fu, ALZUBADI Samir, ALHERABI Tamir

We investigate the photoluminescence properties of 10 layers InGaAs/GaAs Quantum dots embedded in the p-i-n structure. Structure is grown in MOCVD at low temperature. InGaAs/GaAs Quantum dots are potentially an important for the new generation of optoelectronic devices, especially for lasers, photo detectors and possibly for third generation solar cells. The photoluminescence (PL) spectra of at variable temperature and excitation energy. The measured PL results at room temperature shows a prominent peak at 1160nm and very weak shoulder at near to 990 nm. This spectra rapidly increases the sholder peak after downing the temperature below 70K and become parallel prominent at 14K. These two peaks are attributed to InGaAs QDs and attributed to the InGaAs wetting layer. Intensity of PL signal from room temperature to 120K increases very rapidly and then decreases slowly upto 30K and then again slowly increases along with shoulder peak.